Samsung Foundry’s New Transistor Structure: MBCFET™

Samsung’s patented version of Gate-All-Around, MBCFET™ (Multi-Bridge-Channel FET), uses a nanosheet architecture, which enables greater current per stack. Compared to 7nm technology, Samsung’s 3GAE process with MBCFET is designed to provide up to a 45 percent reduction in chip area with 50 percent lower power consumption or 35 percent higher performance. This initial GAA-based process node is expected to be widely adopted in next-generation applications, such as mobile, network, automotive, Artificial Intelligence (AI) and IoT.